LaMa Seminar (3 sessions), Prof. Teplyakov - ALD / ALE
- https://www.uni-giessen.de/de/fbz/zentren/lama/events/lama_sem/lama_sem_teplyakov_2026_02
- LaMa Seminar (3 sessions), Prof. Teplyakov - ALD / ALE
- 2026-02-18T10:00:00+01:00
- 2026-02-23T11:00:00+01:00
Wann
18.02.2026 10:00 bis 23.02.2026 11:00 (Europe/Berlin / UTC100)
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- Atomic Layer Deposition & Atomic Layer Etching
Seminar series for all members of the research groups organized in the ZfM, the Chemistry and the Physics Institutes (students of Materials Science / Advanced Materials, Chemistry and Physics welcome!)
Speaker: Prof. Dr. Andrew V. Teplyakov, full professor at University of Delaware, USA
Topics, Times and Venues:
1) Chemical modification of semiconductor surfaces as a basis of area-selective deposition
Wednesday, Feb. 18 – 10:00 to 11:00 am, HBR 19 (Chemistry), room C 107
2) Control of area selectivity in ALD by small molecule inhibitors and small molecule promoters
Thursday, Feb. 19 – 10:00 to 11:00 am, HBR 19 (Chemistry), room C 107
3) Organic modification in atomic layer etching, with applications to tertiary and 2D van der Waals materials
Monday, Feb. 23 – 10:00 to 11:00 am, HBR 16 (Physics), room 511