May 2017The crystallization of a non-stoichiometric and amorphous thin film is investigated by transmission electron microscopy at elevated temperatures for comparing the results with X-ray diffraction data. The in-situ TEM pictures at 75 °C of an initially amorphous zirconium oxide thin film with a formal composition 1:1 (Zr:O) are shown. The nucleation proceeds already at lower temperatures at the platinum interface and the two grains (50 nm x 30 nm) expand and grow together within a few minutes.Further information (e.g. diffraction pattern) on the properties of the thin film material “ZrOx” can be found in: Phase formation and stability in TiOx and ZrOx thin films: Extremely sub-stoichiometric functional oxides for electrical and TCO applications, Z. Kristallogr. 2017; 232(1-3): 161-183, DOI: 10.1515/zkri-2016-1981, De Gruyter(Picture submitted by Ralph Henning.)https://www.uni-giessen.de/en/faculties/f08/departments/physchem/janek/gallerypotm/pom2017/BdM0517.jpg/viewhttps://www.uni-giessen.de/@@site-logo/logo.png
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May 2017
The crystallization of a non-stoichiometric and amorphous thin film is investigated by transmission electron microscopy at elevated temperatures for comparing the results with X-ray diffraction data. The in-situ TEM pictures at 75 °C of an initially amorphous zirconium oxide thin film with a formal composition 1:1 (Zr:O) are shown. The nucleation proceeds already at lower temperatures at the platinum interface and the two grains (50 nm x 30 nm) expand and grow together within a few minutes.Further information (e.g. diffraction pattern) on the properties of the thin film material “ZrOx” can be found in: Phase formation and stability in TiOx and ZrOx thin films: Extremely sub-stoichiometric functional oxides for electrical and TCO applications, Z. Kristallogr. 2017; 232(1-3): 161-183, DOI: 10.1515/zkri-2016-1981, De Gruyter(Picture submitted by Ralph Henning.)
